豁免項

對應文件號   簽署/頒布日期

1.     Mercury in compact fluorescent lamps not exceeding 5 mg per lamp.

小型日光燈中的汞含量不得超過5毫克/燈。

2002/95/EC
2003.01.27/
2003.02.13

2a. Mercury in straight fluorescent lamps for general purposes not exceeding halophosphate 10 mg.

一般用途的直管日光燈中的汞含量不得超過鹽磷酸鹽10毫克。
 

2b. Mercury in straight fluorescent lamps for general purposes not exceeding triphosphate with normal lifetime 5 mg.
一般用途的直管日光燈中的汞含量不得超過正常的三磷酸鹽5毫克

2c. Mercury in straight fluorescent lamps for general purposes not exceeding triphosphate with long lifetime 8 mg.
一般用途的直管日光燈中的汞含量不得超過長效的三磷酸鹽8毫克。

3. Mercury in straight f1uorescent lamps for special purposes
特殊用途的直管日光燈中的汞含量。

4. Mercury in other lamps not specifically mentioned in this Annex.
本附錄中未特別提及的其它照明燈中的汞含量。

5. Lead in glass of cathode ray tubes, electronic components and
fluorescent tubes.
陰極射線管、電子元件和發光管的玻璃內的鉛含量.

6a. Lead as an alloying element in steel containing up to 0.35% lead by weight.
鉛作為鋼的合金元素，其含量可達0.35%（重量計）。

6b. Lead as an alloying element in aluminium containing up to 0.4% lead by weight.
鉛作為鋁的合金元素，其含量可達0.4%（重量計）。

6c. Lead as an alloying element in copper containing up to 4% lead by weight.
鉛作為銅的合金元素，其含量可達4%（重量計）。

7a. Lead in high melting temperature type solders (i.e.lead-based alloys containing 85 % by weight or more lead).
高溫融化型焊料中的鉛（如：鉛含量≥85%的鉛基合金中的鉛）。

2005/747/EC
2005.10.21/
2005.10.25

7b. Lead in solders for servers, storage and storage array systems, network infrastructure equipment for switching, signalling, transmission as well as network management for telecommunications
用于服務器、存儲和存儲列陣系統以及電信用交換、發信、傳輸和網絡管理的網絡基礎設施設備的焊料中的鉛。

7c.Lead in electronic ceramic parts (e.g. piezoelectronic devices).
電子陶瓷部件中的鉛（例如：高壓電子裝置）。

2005/747/EC
2005.10.21/
2005.10.25

8. Cadmium and its compounds in electrical contacts and cadmium plating except for applications banned under Directive 91/338/EEC amending Directive 76/769/EEC relating to restrictions on the marketing and use of certain dangerous substances and preparations.
除了76/769/EEC《關于限制某些有害物質和物品銷售和使用》指令的修改文件91/338/EEC指令中禁止用途外，電觸頭和鎘鍍層上的鎘及其化合物

9.Hexavalent chromium as an anti-corrosion of the carbon steel cooling system in absorption refrigerators.
吸收式電冰箱中作為碳鋼冷卻系統防腐層的六價鉻。

2002/95/EC
2003.01.27/
2003.02.13

9a. DecaBDE in polymeric applications.
聚合物中使用的十溴二苯醚——據歐洲法院判決該條于2008.07.01刪除，不被豁免。

2005/717/EC
2005.10.13/
2005.10.15

9b. Lead in lead-bronze bearing shells and bushes.
鉛-銅軸承外殼與軸襯中的鉛

10. Within the procedure referred to in Article 7(2),the Commission shall evaluate the applications for:
——Deca BDE,
——mercury in straight fluorescent lamps for special purposes,
——lead in solders for servers, storage and storage array systems, network infrastructure equipment for switching, signalling, transmission as well as network management for Telecommunications（with a view ot setting a specific time limit for exemption ）,and
——light bulbs
歐盟委員會應根據第7（2）條中提及的程序，評價以下方面的應用：
——十溴二苯醚，
——特殊用途的直管日光燈中的汞，
——以下用途中所使用的焊料中的鉛：服務器、存儲器、用于交換和傳輸的網絡基礎設施、電信網絡管理設備（旨在設定本指令豁免部分的特定截止時間），
——燈泡。

2002/95/EC
2003.01.27/
2003.02.13

11. Lead used in compliant pin connector systems.
自適應插腳連接器系統中的鉛

2005/747/EC
2005.10.21/
2005.10.25

12.Lead as a coating material for the thermal conduction module c-ring.
熱導模組C環鍍層中所用的鉛。

13a. Lead in optical and filter glass.
光學濾光玻璃中的鉛。

13b. Cadmium in optical and filter glass.
光學濾光玻璃中的鎘。

14.Lead in solders consisting of more than two elements for the connection between the pins and the package of microprocessors with a lead content of more than 80% and less than 85% by weight.
微處理器針腳及封裝連接所使用的含兩種以上組分且鉛含量在80%和85%之間的焊料中的鉛。

15. Lead in solders to complete a viable electrical connection between semiconductor die and carrier within integrated circuit Flip Chip packages.
集成電路倒裝晶片封裝的半導體連接片和托架之間實施電氣連接所用焊料中的鉛。

16.Lead in linear incandescent lamps with silicate coated tubes.
管狀白熾燈硅酸鹽涂層燈管中的鉛。

2006/310/EC
2006.04.21/
2006.04.28

17.Lead halide as radiant agent in High Intensity Discharge(HID) lamps used for professional reprography applications.
專業復印設備用的高強度放電燈(HID)中作為發光劑的鹵化鉛。

18.Lead as activator in the fluorescent powder (1% lead by weight or less) of discharge amps when used as sun tanning lamps containing phosphors such as BSP(BaSi2O5:Pb) as well as when used as speciality lamps for diazo-printing reprography, lithography, insect traps,photochemical and curing processes containing phosphors such as SMS((Sr,Ba)2MgSi2O7:Pb)(2006/310/EC)
當放電燈被用作含磷的仿日曬燈(sun tanning lamps)，比如含有BSP(BaSi2O5:Pb)， 以及用于重氮復印、平版印刷、捕蟲器、含磷光化學和含磷食物加工過程的專業燈時，比如SMS((Sr,Ba)2MgSi2O7:Pb)，放電燈中的熒光粉觸媒劑的鉛含量在其重量的1％或以下。

19. Lead with PbBiSn-Hg and PbInSn-Hg in specific compositions as main amalgam and with PbSn-Hg as auxiliary amalgam in very compact Energy Saving Lamps (ESL).
緊湊型節能燈(ESL)中作為主要汞齊合金的特定成分(PbBiSn-Hg和PbinSg-Hg)中的鉛以及作為輔助汞合金PbSn-Hg中的鉛。

20. Lead oxide in glass used for bonding front and rear substrates of flat fluorescent lamps used for Liquid Crystal Displays (LCD).
液晶顯示器(LCD)用于連接平面熒光燈前后基片用的玻璃中的氧化鉛。

21.Lead and cadmium in printing inks for the application of enamels on borosilicate glass.
用于硼硅酸鹽玻璃瓷漆的印墨所含的鉛及鎘。

2006/691/EC
2006.04.21/
2006.04.14

22.Lead as impurity in RIG (rare earth iron garnet) Faraday rotators used for fibre optic communications systems.
在光纖通訊系統稀土鐵石榴石法拉第旋轉器中作為雜質的鉛。
這項豁免有效期至2011年1月1日

23.Lead in finishes of fine pitch components other than connectors with a pitch of 0.65mm or less with NiFe lead frames and lead in finishes of fine pitch components other than connectors with a pitch of 0.65 mm or less with copper lead frames.
使用鐵鎳合金或者銅引線框架的細間距元器件（即不大于0.65mm的引腳間距）的表面處理中的鉛，不包括連接器類。

24.Lead in solders for the soldering to achined through hole discoidal and planar array ceramic multilayer capacitors.
通孔盤狀及平面陣列陶瓷多層電容器焊料所含的鉛。

25. Lead oxide in plasma display panels (PDP) and surface conduction electron emitter displays (SED) used in structural elements; notably in the front and rear glass dielectric layer, the bus electrode, the black stripe, the address electrode, the barrier ribs, the seal frit and frit ring as well as in print pastes.
等離子顯示屏（PDP）及表面傳導式電子發射顯示器（SED）的部件所用的氧化鉛，特別是玻璃前后絕緣層、總線電極、黑條（彩色顯像管）、尋址電極、阻擋層肋柱、密封玻璃料以及封裝玻璃、環狀玻璃、印墨中

26.Lead oxide in the glass envelope of BlackLight Blue (BLB) lamps.
藍黑燈管（BLB）玻璃外罩所用的氧化鉛。

27.Lead alloys as solder for transducers used in high-powered (designated to operate for everal hours at acoustic power levels of 125 dB SPL and above) loudspeakers.
在大功率揚聲器中作為轉換器焊料的鉛合金。

28. Hexavalent chromium in corrosion preventive coatings of unpainted metal sheetings and fasteners used for corrosion protection and Electromagnetic Interference Shielding inequipment falling under category three of Directive 2002/96/EC (IT and telecommunications equipment).Exemption granted until 1 July 2007.
金屬板防腐蝕涂層、防腐蝕牢固劑及第2002/96/EC指令（IT及電信設備）涉及的第三類設備的電磁干擾屏障所含的六價鉻。
這項豁免有效期至2007年7月1日

2006/692/EC
2006.04.21/
2006.04.14

29.Lead bound in crystal glass as defined in Annex I (Categories 1, 2, 3 and 4) of Council Directive 69/493/EEC.
理事會第69/493/EEC指令附件I（第1、2、3和4類）中定義的水晶玻璃中的鉛。

2006/690/EC
2006.04.21/
2006.04.14

30. Cadmium alloys as electrical/mechanical solder joints to electrical conductors located directly on the voice coil in transducers used in high-powered loudspeakers with sound pressure levels of 100 dB (A) and more.
用于音壓級大于或等于100分貝高功率音響中音圈轉換器上的電導體的電氣或機械焊點中的鎘合金。

2008/385/EC
2008.01.24/
2008.05.24

31.Lead in soldering materials in mercury free flat fluorescent lamps (which e.g. are used for liquid crystal displays, design or industrial lighting).
無汞平面熒光燈內焊接材料中所含的鉛（例如用于液晶顯示器、設計或工業用明）。

32. Lead oxide in seal frit used for making window assemblies for Argon and Krypton laser tubes. (2008/385/EC)
封裝氬和氪激光管防護窗組件封裝玻殼所含的的鉛氧化合物.

33. Lead in solders for the soldering of thin copper wires of 100μm diameter and less in power transformers.                                                                 

電力變壓器中直徑100微米及以下的細銅線所用焊料中的鉛。

2009/443/EC
2009.06.10/
2009.06.11

34. Lead in cermet-based trimmer potentiometer elements.                               

金屬陶瓷質的微調電位器中的鉛。

35. Cadmium in photoresistors for optocouplers applied in professional audio equipment until 31 December 2009.                                                              

專業音頻設備中的光耦合器中使用的光敏電阻的鎘.這項豁免有效期至2009年12月31日

36. Mercury used as a cathode sputtering inhibitor in DC plasma displays with a content up to 30 mg per display until 1 July 2010.                                                 

直流等離子顯示器中，作為陰極濺射抑制劑中的汞，其含量不得超過30毫克/顯示器。這項豁免有效期至2010年7月1日

37. Lead in the plating layer of high voltage diodes on the basis of a zinc borate glass body.                                                         

以硼酸鋅玻璃體為基礎的高壓二極管的電鍍層的鉛

38. Cadmium and cadmium oxide in thick film pastes used on aluminium bonded beryllium oxide.                                                          

用氧化鈹連接鋁制成的厚膜漿料中鎘和氧化鎘

39. Cadmium in colour converting II-VI LEDs (< 10 μg Cd per mm2 of light-emitting area) for use in solid state illumination or display systems until 1 July 2014 .                                                                

用于固態照明或顯示系統中的彩色轉換II - VI族發光二極管(小于10微克每平方毫米的發光區域)內所含的鎘。這項豁免有效期至2014年7月1日

2010/122/EU